GaN Amplifier Technology Advancements

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http://cinziamazzamakeup.com/?x=Acquistare-Cialis-Originale-20mg-senza-ricetta-in-Milano http://cinziamazzamakeup.com/?x=cialis-generico-online-recensioni Overview: Improvements in solid-state power amplifiers depend on advances in transistors. The Engineers at IFI continuously receive the most current transistor technology available by working closely with all the transistor foundries. Fortunately, evolving gallium nitride (GaN) high-electron-mobility-transistor (HEMT) technology is bringing many benefits to high-frequency amplifier designers here at IFI. A key advantage of GaN HEMT devices operating at > 1000 MHz compared to other transistor technologies is the high power density possible from relatively small transistor cells.

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http://maientertainmentlaw.com/?search=cialis-online-uk These advancement have allowed IFI’s design team to develop for the market some of the smallest high power amplifiers currently available. The SMC series operate over 80-1000MHz and produce 1000 watts in an ultra-small 10.5”H (6U) chassis. The S61 series operates over 700-6000MHz and can produce 100 watts in an ultra-small 5.25”H (3U) chassis. The Amplifiers provide outstanding RF performance. These products are available in a wide range of power levels from 10 watts to 3000 watts in the 80 – 1000 MHz frequency range. These state-of-the-art solid-state power amplifiers are specifically designed for laboratory and all testing applications. IFI RF amplifiers are very conservatively designed to operate below maximum ratings for ruggedness and long term reliability.

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